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PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
Rev. 01 -- 12 May 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Package NXP PMBT3904YS SOT363 JEITA SC-88 PNP/PNP complement PMBT3906YS NPN/PNP complement Package configuration
Type number
PMBT3946YPN very small
1.2 Features
I General-purpose double transistor I Board-space reduction
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 1 V; IC = 10 mA Conditions open base Min 100 Typ 180 Max 40 200 300 Unit V mA
Per transistor
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
1 2 3 1 2
sym020
Simplified outline
6 5 4
Graphic symbol
6 5 4
TR2 TR1
3
3. Ordering information
Table 4. Ordering information Package Name PMBT3904YS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
4. Marking
Table 5. Marking codes Marking code[1] BC* Type number PMBT3904YS
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
2 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C Tamb 25 C
[1]
Min -55 -65
Max 60 40 6 200 200 100 230 350 150 +150 +150
Unit V V V mA mA mA mW mW C C C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
400 Ptot (mW) 300
006aab113
200
100
0 -75
-25
25
75
125 175 Tamb (C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
3 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
6. Thermal characteristics
Table 7. Symbol Per transistor Rth(j-a) Rth(j-sp) Per device Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air
[1]
Conditions in free air
[1]
Min -
Typ -
Max 543 290
Unit K/W K/W
-
-
357
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103 =1 Zth(j-a) (K/W) 102 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
006aab114
10
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
4 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per transistor ICBO IEBO hFE collector-base cut-off current emitter-base cut-off current DC current gain VCB = 30 V; IE = 0 A VEB = 6 V; IC = 0 A VCE = 1 V IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat fT Cc Ce NF collector-emitter saturation voltage base-emitter saturation voltage transition frequency collector capacitance emitter capacitance noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA VCE = 20 V; IC = 10 mA; f = 100 MHz VCB = 5 V; IE = ie = 0 A; f = 1 MHz VBE = 0.5 V; IC = ic = 0 A; f = 1 MHz VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz VCC = 3 V; IC = 10 mA; IBon = 1 mA; IBoff = -1 mA 60 80 100 60 30 650 300 180 180 180 105 50 75 120 750 850 300 200 300 850 950 4 8 5 mV mV mV mV MHz pF pF dB 50 50 nA nA Conditions Min Typ Max Unit
td tr ton ts tf toff
delay time rise time turn-on time storage time fall time turn-off time
-
-
35 35 70 200 50 250
ns ns ns ns ns ns
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
5 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
600 hFE
006aab115
0.20 IB (mA) = 5.0 IC (A) 0.15 4.0 3.0 2.0 1.0
006aab116
4.5 3.5 2.5 1.5
400
(1)
0.10
0.5 200
(2)
0.05
(3)
0 10-1
1
10
102 IC (mA)
103
0.0 0 2 4 6 8 10 VCE (V)
VCE = 1 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 3.
DC current gain as a function of collector current; typical values
1.2
006aab117
Fig 4.
Collector current as a function of collector-emitter voltage; typical values
1.3
006aab118
VBE (V)
(1)
VBEsat (V) 0.9
(1) (2) (3)
0.8
(2)
0.4
0.5
(3)
0 10-1
1
10
102 IC (mA)
103
0.1 10-1
1
10
102 IC (mA)
103
VCE = 1 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
Fig 6.
Base-emitter saturation voltage as a function of collector current; typical values
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
6 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
1
006aab119
VCEsat (V)
10-1
(2)
(1)
(3)
10-2 10-1
1
10
102 IC (mA)
103
IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
8. Test information
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
Fig 8.
Test circuit for switching times
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
7 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
9. Package outline
2.2 1.8 6 5 4 0.45 0.15 1.1 0.8
2.2 1.35 2.0 1.15
pin 1 index
1 0.65 1.3 Dimensions in mm
2
3 0.3 0.2 0.25 0.10 06-03-16
Fig 9.
Package outline SOT363 (SC-88)
10. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 10000 -135 -165 -115 -125
PMBT3904YS SOT363
For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
8 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
11. Soldering
2.65
solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm
sot363_fr
Fig 10. Reflow soldering footprint SOT363 (SC-88)
1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering
1.3 2.45 5.3
1.3
sot363_fw
Fig 11. Wave soldering footprint SOT363 (SC-88)
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
9 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
12. Revision history
Table 10. Revision history Release date 20090512 Data sheet status Product data sheet Change notice Supersedes Document ID PMBT3904YS_1
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
10 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBT3904YS_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 12 May 2009
11 of 12
NXP Semiconductors
PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 May 2009 Document identifier: PMBT3904YS_1

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